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To understand the effects of thermal annealing on the structure of Ge x As y Se 1-x-y thin films, the thermal evolution of these films was measured by exy in situ X-ray diffraction XRD at different temperature K or K in a vacuum 10 -1 Pa environment. The entire process of crystallization can be observed by using in situ XRD, which is from exy appearance of a crystal structure to melting liquid-state and ultimately to the disappearance of the amorphous structure.

In exy crystallized process, the corresponding state-transition temperatures T x the onset crystallization temperatureT l the transition temperature from glassy-state to liquid-stateT p peak crystallization temperature are linear with MCN Mean Coordination .

In order to obtain information about changes in the amorphous structural origin of the anneal-induced material, the samples were analyzed by in exy Raman spectroscopy. Analysis of the through exy the Raman spectra into different structural units showed that the Ge-Ge, As-As, or Se-Se homopolar bonds as the nonequilibrium minority carriers exy be found in films. It suggests that the formation of these bonds cannot be completely suppressed in any case, as one falls and another rises. The authors declare no conflict of interest. Two transition temperatures the onset crystallization temperature T x and peak crystallization temperature….

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RSS Link Copy. Full text links Cite Display options Display options. Abstract To understand the effects of thermal annealing on the structure of Ge x As y Se 1-x-y thin films, the thermal evolution of these films was measured by the in situ X-ray diffraction XRD at different temperature K or Exy in a vacuum 10 -1 Pa environment. Conflict of interest statement The authors declare exy conflict of interest. Figures Figure 1 X-ray diffraction patterns of Ge…. Figure 2 The in situ x-ray diffraction…. Figure 3 Two transition temperatures the onset…. Figure 3 Two transition temperatures the onset exy temperature T x and peak crystallization temperature….

Two transition temperatures the onset crystallization temperature T x and peak crystallization temperature T p as a function of MCN Mean Coordination exy. Figure 4 The Raman patterns of Ge…. Figure 5 The in situ Raman patterns….

Figure 6 The set of exy situ…. Figure 7 The relative ratio of the…. Figure 7 The relative ratio of the area of each decomposed peak to the entire…. The relative ratio of the area of each decomposed peak to the entire integrated area of Raman spectra, a Ge 20 As 10 Se 70 b Ge Exy 8 The electrical resistance change in….

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All figures 9. See this image and copyright information in PMC. Li Q, et al. Inorg Chem.

Epub Jul PMID: Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering. Taborda JA, et al. Epub Mar In situ micro-Raman analysis and X-ray diffraction exy nickel silicide thin exy on silicon. Bhaskaran M, et al. Epub Apr 4. In situ investigation of thermally influenced phase transformations in Pb 0.

Sriram S, et al.

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Thermal annealing effect on the optical properties of Ag10As30S60 thin film. Abd-Elrahman MI, et al.

Epub Aug See all similar articles. References Guo P. A review of germanium-antimony-telluride exy change materials for non-volatile memories and optical modulators. Amorphous Chalcogenides: Advances and Applications.

Pan Stanford Publishing; Singapore: Tanaka K. Amorphous Chalcogenide Semiconductors and Related Materials. Boschker J. GeTe: A simple compound blessed with a plethora of properties. States in exy Gap in Glassy Semiconductors. Copy Download.

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